Effect of Fe content on Cu2Fe x Zn1−x SnS4 single crystals fabricated by flux growth method
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aac7dc/pdf
Reference24 articles.
1. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency
2. Cation Substitution in Earth-Abundant Kesterite Photovoltaic Materials
3. A general strategy for synthesis of quaternary semiconductor Cu2MSnS4 (M = Co2+, Fe2+, Ni2+, Mn2+) nanocrystals
4. Earth-abundant quaternary semiconductor Cu 2 MSnS 4 (M = Fe, Co, Ni and Mn) nanofibers: Fabrication, characterization and band gap arrangement
5. From kesterite to stannite photovoltaics: Stability and band gaps of the Cu2(Zn,Fe)SnS4 alloy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transformation of carrier recombination mechanism as increasing the Germanium content in Cu2ZnGexSn1-xS4 single crystal prepared by molten salt method;Optical Materials;2023-05
2. Facile deposition and study of substrate temperature effect on the structural and physical properties of Cu2FeSnS4 (CFTS) thin films;Journal of Materials Science: Materials in Electronics;2020-01-02
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