The forming-free bipolar resistive switching characteristics of Ag2Se thin film-Reference-Cited by-同舟云学术

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The forming-free bipolar resistive switching characteristics of Ag2Se thin film

Published:2017-04-26 Issue:20 Volume:50 Page:205103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Lee T S,Lee N J,Lee H K,Abbas Y,Abbas H,Hu Q L,Yoon T S,Kang C J

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/50/i=20/a=205103/pdf

Reference39 articles.

1. Mobile silver ions and glass formation in solid electrolytes

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Conductance switching in Ag2S devices fabricated byin situsulfurization

4. The chemically driven phase transformation in a memristive abacus capable of calculating decimal fractions

5. Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems

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1. Analog resistive switching behavior in BiCoO3 thin film;Solid-State Electronics;2024-02

2. Dielectric and bipolar resistive switching properties of Ag doped As–S–Se chalcogenide for non-volatile memory applications;Materials Chemistry and Physics;2023-02

3. Improved analog switching characteristics of Ta₂O₅-based memristor using indium tin oxide buffer layer for neuromorphic computing;Nanotechnology;2022-03-23

4. Conservation of chirality at a junction between two Weyl semimetals;Physical Review B;2021-09-23

5. Atomic Properties of Monoclinic Ag2Se Thin Film Grown on SrTiO3 Substrate by Molecular Beam Epitaxy;The Journal of Physical Chemistry Letters;2021-04-23

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