Abstract
Abstract
Direct epitaxial growth of III–V quantum dot (QD) lasers on Si (001) substrates is recognized as a promising and low-cost method for realizing high-performance on-chip light sources in silicon photonic integrated circuits (PICs). Recently, the CMOS-compatible patterned Si (001) substrates with sawtooth structures have been widely implemented to suppress the lattice mismatch induced defects and antiphase boundaries for heteroepitaxial growth of high-quality III–V materials on Si. Considerable progresses have been made on high-performance 1300 nm InAs/GaAs QD lasers on Si (001). Here, we report a thermal stress-relaxed (111)-faceted silicon hollow structures by homoepitaxial method for reliable InAs/GaAs QD lasers growing on Si (001) substrates. Both simulation analysis and experimental results indicate that the voids buried below the sawtooth structures can release about 9% of the accumulative thermal stress of the III–V/Si system during the cooling process. Furthermore, electrically pumped InAs/GaAs QD narrow ridge lasers are grown and fabricated on the specially designed Si (001) platforms with a maximum operation temperature up to 90 °C under continuous-wave operation mode. Additionally, an extrapolated lifetime of over 5300 h is calculated from the reliability test at 65 °C. These results lead toward high-yield, scalable, and reliable III–V lasers on Si (001) substrates for PICs.
Funder
Youth Innovation Promotion Association of CAS
National Key Research and Development Program of China
National Natural Science Foundation of China
Guangdong Key-Area Research and Development Program of Guangdong Province
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
12 articles.
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