Abstract
Abstract
In this work, we systematically investigate the effects of the insertion of the solid-state electrolyte material copper–tellurium (CuTe) in resistance random access memory (RRAM). The CuTe layer is inserted as Cu/CuTe/SiO2/TiN (top-to-bottom) and the device exhibits excellent resistance switching (RS) characteristics such as lower forming bias, a larger memory window and faster RS speed, compared to the Cu/SiO2/TiN device. This validates the effects of the inserted CuTe layer with a Cu electrode. Furthermore, an additionally fabricated Cu/CuTe/TiN device demonstrates that the CuTe layer can also successfully act as a middle insulator for the RRAM device, based on the obtained experimental results.
Funder
Ministry of Science and Technology, Taiwan
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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