Impact of graphene interlayer on performance parameters of sandwich structure Pt/GaN Schottky barrier diodes-Reference-Cited by-同舟云学术

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Impact of graphene interlayer on performance parameters of sandwich structure Pt/GaN Schottky barrier diodes

Published:2020-07-16 Issue:40 Volume:53 Page:404003
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Ran J X^ORCID,Liu B Y,Ji X L,Fariza A,Liu Z T,Wang J X,Gao P,Wei T B

Funder

“2011 Program” Peking-Tsinghua-IOP Collaborative Innovation Center for Quantum Matter

Beijing Natural Science Foundation

National Natural Science Foundation of China

National Key R&D Program of China

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6463/ab9a9b/pdf

Reference32 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. A computational study of high-frequency behavior of graphene field-effect transistors

3. The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

4. Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface states modulation in Pt/Graphene/GaN Schottky barrier diodes;Materials Science in Semiconductor Processing;2024-07

2. Atomic-scale simulation of ultrasonic vibration-assisted polishing process for graphene/GaN-layered composites;Materials Science in Semiconductor Processing;2024-06

3. Barrier height enhancement in Pt/n-Ge Schottky junction with a ZnO interlayer prepared by atomic layer deposition;Journal of the Korean Physical Society;2022-06-27

4. Improved barrier homogeneity in Pt/Al_0.75Ga_0.25N Schottky barrier diodes by graphene interlayer;Journal of Physics D: Applied Physics;2022-05-12

5. Construction of a Cu–Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber;ACS Applied Materials & Interfaces;2021-03-08

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