Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes

Abstract

Abstract Operation of semiconductor lasers in the 20–50 µm wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at λ = 26, …, 30 µm at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses.