Study of dark current in mid-infrared InAsSb-based heteron-i-pphotodiode-Reference-Cited by-同舟云学术

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Study of dark current in mid-infrared InAsSb-based heteron-i-pphotodiode

Published:2018-06-14 Issue:27 Volume:51 Page:275102
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Suo Fei,Tong Jinchao^ORCID,Qian Li,Zhang Dao Hua

Funder

Economic Development Board - Singapore

Singapore and Asian Office of Aerospace Research and Development

Ministry of Education, Singapore

Agency for Science, Technology and Research

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aac8d0/pdf

Reference35 articles.

1. Infrared Detectors

2. Analytical Simulation of an InAsSb Photovoltaic Detector for Mid-Infrared Applications

3. Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb

4. Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm

5. nBn detector, an infrared detector with reduced dark current and higher operating temperature

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1. High-quality lateral monolayer-multilayer graphene junction formed by selective laser thinning for self-powered photodetection;Nanotechnology;2024-06-07

2. High Temperature Mid-Wave Infrared InAsSb Barrier Photodetectors;IEEE Journal of Quantum Electronics;2024-04

3. Theoretical Simulation of Extended Mid-Wave Infrared High Operating Temperature InSb pBn Photodetectors;IEEE Journal of Quantum Electronics;2023-12

4. The effect of the incorporation of phosphor on the optoelectronic properties of InAs 0.75 Sb 0.250 ternary for optical telecommunications: DFT calculation;2023-11-15

5. Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector;J INFRARED MILLIM W;2023

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