Abstract
Abstract
Plasmonic laser has great potential to overcome the optical diffraction limit, playing a crucial role in advancing nanophotonics and nanoelectronics for on-chip integration. However, current plasmonic lasers face several challenges, such as the difficulty in controlling nanowire (NW) size, disordered arrangement, and complicated fabrication process. Herein, ultra-thin gain media for plasmonic lasers below the cutoff size of the photonic mode are prepared using the polydimethylsiloxane-assisted imprinting. This method enables precise control over the size of the perovskite NW, with the minimum size achievable being 60 nm. As a result, the plasmonic lasing is achieved from the CsPbBr3 NW-based device with a threshold as low as ∼49.13 μJ cm−2 and a Quality Factor (Q) of 1803 at room temperature, demonstrating its capability for achieving high-quality lasing. Meanwhile, a dual-pumping time-resolved fluorescence study suggests that the radiative recombination lifetime of CsPbBr3 NWs is shortened by a factor of 10 due to the Purcell effect, confirming the plasmonic effect exhibited by the device. Furthermore, a plasmonic laser array is developed using this method, demonstrating the applicability of the imprinting method in complex graphic fabrication. This breakthrough provides a solution for the application of plasmonic laser arrays in optoelectronic integration.
Funder
Youth Innovation Promotion Association of the Chinese Academy of Sciences
National Natural Science Foundation of China
CAS Project for Young Scientists in Basic Research
Strategic Priority Research Program of the Chinese Academy of Sciences
National Key Research and Development Program of China