Analytical gate fringe capacitance model for nanoscale MOSFET with layout dependent effect and process variations-Reference-Cited by-同舟云学术

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Analytical gate fringe capacitance model for nanoscale MOSFET with layout dependent effect and process variations

Published:2018-06-19 Issue:27 Volume:51 Page:275104
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Sun Yabin^ORCID,Liu Ziyu,Li Xiaojin,Ren Jiaqi,Zheng Fanglin,Shi Yanling

Funder

Shanghai Sailing Program

National Natural Science Foundation of China

National Science and Technology Major Project

Science and Technology Commission of Shanghai Municipality

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aac7d0/pdf

Reference21 articles.

1. Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

2. Impact of Fringe Capacitance on the Performance of Nanoscale FinFETs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of underlap layer on DC and RF/analog performance of asymmetric junctionless dual material double gate MOSFET for low-power analog amplifier design;Physica Scripta;2024-08-09

2. Novel Statistical Modeling and Parameter Extraction Methodology of Cutoff Frequency for RF-MOSFETs;2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS);2020-05

3. Mathematical Model and Experimental Design of Nanocomposite Proximity Sensors;IEEE Access;2020

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