Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits

Abstract

Abstract As the scaling of integrated circuits based on silicon semiconductors becomes increasingly challenging due to the minimum feature size being close to the physical limit, the urgent demand for alternative strategies has fuelled the rapid growth of techniques and material innovations. Here, we report on the fabrication of vertically stacked ambipolar complementary field-effect transistor that is fully composed of two-dimensional materials of WSe2/h-BN/graphene/h-BN/WSe2 heterostructures. The ambipolar feature of the top and bottom WSe2 FET enables a switchable inverter behavior with a favorable voltage gain of up to 75, which can work in both the first and third quadrants. Based on the switchable characteristics, a large voltage swing circuit for single photon avalanche detectors is proposed without any bulky negative-voltage components. This work could open a new pathway for future two-dimensional electronics and ultimate monolithic 3D high-density integration circuits.