Abstract
Abstract
Silicon carbide (SiC) semiconductors with a wide bandgap have attracted much attention because they can endure harsh environments and high temperatures. SiC photodetectors based on conventional principles usually detect ultraviolet (UV) light without the ability to discriminate wavelength. Here, using the charge narrowing collection principle, we realize a highly sensitive filterless narrowband 4H-SiC photodetector. The 4H-SiC layer is sufficiently thick to facilitate charge collection narrowing of the device’s external quantum efficiency spectrum, inducing a full width at half-maximum of 14.5 nm at the peak wavelength of 355 nm. Thanks to the Fermi level pinning effect, the proposed photodetector can fully eliminate the injection current; thus it works as a photovoltaic type device with a remarkably low dark current. Consequently, the device has a photo-to-dark current ratio as high as 4 × 107, superior to the performance of most reported 4H-SiC UV photodetectors. In addition, the device can detect light signals with a power density as low as 96.8 pW cm−2, more than two orders of magnitude superior to that of the commercial product based on the photodiode principle. Moreover, it can endure high temperatures of 350 °C, demonstrating bright prospects in harsh industrial conditions.
Funder
The key Research and Development Program of Shanxi Province
Research Program Supported by Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering
the Central Government Guides Local Funds for Scientific and Technological Development
Introduction of Talents Special Project of Lvliang City
the Natural Science Foundation of Shanxi Province
Research Project Supported by Shanxi Scholarship Council of China
National Natural Science Foundation of China
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials