Investigation on the interaction between a gallium nitride surface and H2O using a nanometer-scale GaN lamella structure
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6463/aba972/pdf
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1. Free-standing gallium nitride membrane-based sensor for the impedimetric detection of alcohols
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1. High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C;Applied Physics Letters;2024-05-13
2. A Review on Gallium Nitride for Liquid Sensors: Fabrications to Applications;ACS Applied Electronic Materials;2024-05-10
3. Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments;Applied Physics Letters;2024-04-22
4. Investigation into water-induced surface oxidization of GaN lamella structure;Semiconductor Science and Technology;2021-07-02
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