Design of a highly efficient n-CdS/p-AgGaTe2/p+-SnS double-heterojunction thin film solar cell

Abstract

AbstractIn this article, AgGaTe2-basedn-CdS/p-AgGaTe2/p+-SnS double-heterojunction solar cells have been designed and explored utilizing a solar cell capacitance simulator (SCAPS-1D). This design manifestedn-type CdS andp+-type SnS as window and back surface field (BSF) layer, respectively with the AgGaTe2absorber. The major contributing parameters of these layers such as thickness, doping concentration level, and bulk flaws have been adjusted to reach the optimum computation. This introducedn-CdS/p-AgGaTe2/p+-SnS double-heterostructure solar cell demonstrates the significant power conversion efficiency (PCE) of 32.48% with the open circuit voltage, VOCof 0.96 V, short circuit current, JSCof 38.64 mA cm−2, and the Fill factor, FF of 87.31%. This remarkable efficiency is originated by the formation of a higher built-in potential at thep-AgGaTe2/p+-SnS heterostructure and a decrease in the surface recombination velocity brought on by the SnS BSF layer. This computational study demonstrates the potential of AgGaTe2as an absorber and SnS as a BSF layer, and pave the way for the AgGaTe2-based experimental research in the era of solar cells.