Abstract
Abstract
In the last years, the implementation of solution-processing techniques, as well as the use of nanostructured oxide semiconductors, have pursued the development of large-area electronic systems. However, the proper understanding of the electrical characteristics of this type of devices is needed with the aim to properly implement potential applications. In general, the diode behaviour at forward condition has been analysed in the literature, but at reverse condition further research is required. Therefore, in this work, the fabrication and electrical characterization at reverse condition of solution-processed Schottky-Barrier-Diodes based on ZnO-rods is presented. Two different conduction mechanisms with a transition occurring at around –2 V were observed. Also, numerical solutions of the diode reverse current characteristic, which includes the series resistance (R
s
) for both conduction mechanisms, were implemented and the impact of the series resistance was addressed. Finally, a numerical optimization strategy was used to determine the diode parameters which best fit the experimental current.