Paper based flexible MoS2-CNT hybrid memristors

Abstract

Abstract We report for the first time MoS2/CNT hybrid nanostructures for memristor applications on flexible and bio-degradable cellulose paper. In our approach, we varied two different weight percentages (10% and 20%) of CNT’s in MoS2 to improve the MoS2 conductivity and investigate the memristor device characteristics. The device with 10% CNT shows a low V SET voltage of 2.5 V, which is comparatively small for planar devices geometries. The device exhibits a long data retention time and cyclic current–voltage stability of ∼104 s and 102 cycles, making it a potential candidate in flexible painted electronics. Along with good electrical performance, it also demonstrates a high mechanical stability for 1000 bending cycles. The conduction mechanism in the MoS2-CNT hybrid structure is corroborated by percolation and defect-induced filament formation. Additionally, the device displays synaptic plasticity performance, simulating potentiation and depression processes. Furthermore, such flexible and biodegradable cellulose-based paper electronics may pave the way to address the environmental pollution caused by electronic waste in the near future.