Abstract
Abstract
GaAs compound-based electronics attracted significant interest due to unique properties of GaAs like high electron mobility, high saturated electron velocity and low sensitivity to heat. However, GaAs compound-based electronics demand a significant decrease in their manufacturing costs to be a good competitor in the commercial markets. In this context, copper-based nanoparticle (NP) inks represent one of the most cost-effective metal inks as a proper candidate to be deposited as contact grids on GaAs. In addition, Inkjet-printing, as a low-cost back-end of the line process, is a flexible manufacturing method to deposit copper NP ink on GaAs. These printed copper NP structures need to be uncapped and fused via a sintering method in order to become conductive and form an ohmic contact with low contact resistivity. The main challenge for uncapping a copper-based NP ink is its rapid oxidation potential. Laser sintering, as a fast uncapping method for NPs, reduces the oxidation of uncapped copper. The critical point to combine these two well-known industrial methods of inkjet printing and laser sintering is to adjust the printing features and laser sintering power in a way that as much copper as possible is uncapped resulting in minimum contact resistivity and high conductivity. In this research, copper ink contact grids were deposited on n-doped GaAs by inkjet-printing. The printed copper ink was converted to a copper grid via applying the optimized settings of a picosecond laser. As a result, an ohmic copper on GaAs contact with a low contact resistivity (8 mΩ cm2) was realized successfully.
Funder
European Union’s Horizon 2020 research and innovation programme
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Cited by
7 articles.
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