Stable and reliable IGZO resistive switching device with HfAlO x interfacial layer

Abstract

Abstract The performance stability of the resistive switching (RS) is vital for a resistive random-access memory device. Here, by inserting a thin HfAlO x layer between the InGaZnO (IGZO) layer and the bottom Pt electrode, the RS performance in amorphous IGZO memory device is significantly improved. Comparing with a typical metal-insulator-metal structure, the device with HfAlO x layer exhibits lower switching voltages, faster switching speeds, lower switching energy and lower power consumption. As well, the uniformity of switching voltage and resistance state is also improved. Furthermore, the device with HfAlO x layer exhibits long retention time (>104 s at 85 °C) , high on/off ratio and more than 103 cycles of endurance at atmospheric environment. Those substantial improvements in IGZO memory device are attributed to the interface effects with a HfAlO x insertion layer. With such layer, the formation and rupture locations of Ag conductive filaments are better regulated and confined, thus an improved performance stability.