Synthesis and solar blind photosensitivity of crystalline boron nanowires

Abstract

Abstract Herein, single crystalline boron nanowires (BNWs) have been synthesized by chemical vapor transport using boron element as boron source, iodine as transport agent, and Au as catalyst. The results demonstrate that BNWs can be all formed at 600 °C–950 °C for 2 h, and possess rhombohedral crystal structure (β-boron). The NWs have diameters from several to hundreds of nanometers, and lengths from several to hundreds of microns. A single nanowire has been fabricated to field effect transistor (FET) which shows excellent solar blind photosensitivity and selectivity. The photo/dark current ratio and photoresponsitity is 1.14 and 97.6 mA W−1 at a bias of 5 V under light illumination of 254 nm with 0.42 mW cm−2, respectively, and both the rising and decay time of the on–off currents are 4.6 s and 10.3 s, respectively. When the FET is used as a personal breath sensor, the ratio of exsufflating and inhaling currents is 2.7, rising and decay time of the breath currents are 0.4 s and 2.2 s, respectively. So the BNWs are important sense materials.