Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications
Author:
Funder
Norges Forskningsråd
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/ab13ed/pdf
Reference117 articles.
1. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun
2. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices
3. Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection
4. Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature
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