Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors-Reference-Cited by-同舟云学术

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Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors

Published:2019-09-18 Issue:48 Volume:30 Page:485201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Li Heyi,Liu Chaoming^ORCID,Zhang Yanqing,Qi Chunhua,Wei Yidan,Zhou Jiaming,Wang Tianqi,Ma Guoliang,Tsai Hsu-Sheng,Dong Shangli,Huo Mingxue

Funder

National Natural Science Foundation of China

Natural Science Foundation of Heilongjiang Province

Science and Technology Innovation Foundation of Harbin

Science and Technology Project of Sichuan

111 project

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/ab3ce2/pdf

Reference48 articles.

1. Ultrafast electronic response of graphene to a strong and localized electric field

2. Two-Dimensional Heterostructure as a Platform for Surface-Enhanced Raman Scattering

3. Graphene transistors

4. Electronic Band Structures of Molybdenum and Tungsten Dichalcogenides by the GW Approach

5. Flat transistors get off the ground

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition;Applied Surface Science;2023-12

2. Radiation Resilient Two-Dimensional Electronics;ACS Applied Materials & Interfaces;2023-05-26

3. In situ electron-beam-induced mechanical loading and fracture of suspended strained silicon nanowires;Journal of Vacuum Science & Technology B;2023-03-01

4. Effect of gamma irradiation on the physical properties of MoS₂ monolayer;Physical Chemistry Chemical Physics;2023

5. Manipulation of the electrical and memory properties of MoS₂ field-effect transistors by highly charged ion irradiation;Nanoscale Advances;2023

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