A spin modulating device, tuned by the Fermi energy, in honeycomb-like substrates periodically stubbed with transition-metal-dichalkogenides

Abstract

Abstract We investigate spin transport through graphene-like substrates stubbed vertically with transition-metal-dichalcogenides (TMDs). A tight-binding model is used based on a graphene-like Hamiltonian that includes different types of spin–orbit coupling (SOC) terms permitted by the C 3v symmetry group in TMDs/graphene-like heterostructures. The results show a spin modulation obtained by tuning the strength and sign of the Fermi energy E F and not by varying the SOC strength as is mainly the case of Datta and Das. The spin conductance is directly controlled by the value of E F . In addition, a perfect electron-spin modulation is obtained when a vertical strain is introduced. In this case, the spin conductance exhibits a strong energy dependence. The results may open the route to a combination of graphene-like substrates with TMD stubs and the development of spin-transistor devices controlled by the Fermi energy rather than the SOC strength.