Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation-Reference-Cited by-同舟云学术

Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation

Published:2016-12-28 Issue:5 Volume:28 Page:055203
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Kim Choong-Ki,Jeong Eun Gyo,Kim Eungtaek,Song Jeong-Gyu,Kim Youngjun,Woo Whang Je,Lee Myung Keun,Bae Hagyoul,Jeon Seong-Bae,Kim Hyungjun,Choi Kyung Cheol,Choi Yang-Kyu

Funder

Open Innovation Lab Project from the National Nanofab Center(NNFC)

ICT&Future Planning as Global Frontier Project

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/28/i=5/a=055203/pdf

Reference34 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Emerging Photoluminescence in Monolayer MoS2

3. Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

4. Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors

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