Solvothermal synthesis of TiO2 nanospheres for non-volatile memory and synaptic learning applications

Author:

Nikam Ankita S,Kamble Girish U,Patil Amitkumar R,Patil Sharad B,Sheikh Arif DORCID,Takaloo Ashkan V,Gaikwad Pawan K,Kamat Rajanish K,Kim Jin H,Dongale Tukaram DORCID

Abstract

Abstract In this study, we used the one-pot solvothermal method to synthesize the TiO2 nanospheres (NSs) and used them for non-volatile memory and neuromorphic computing applications. Several analytical tools were used to understand the structural, optical, morphological, and compositional characteristics of synthesized TiO2 NSs. The tetragonal crystal structure of anatase TiO2 was formed, according to the Rietveld refined x-ray diffraction results. The NS morphology was confirmed by field emission scanning electron microscopy and transmission electron microscopy images. X-ray photoelectron spectroscopy was probed to understand the elemental composition and electronic states of the TiO2 NSs. We specifically looked at the impact of reaction time on the structural, optical, morphological, compositional, and resistive switching (RS) properties of TiO2 NSs. The fabricated devices (Ag/TiO2 NSs/FTO) exhibit bipolar RS behavior. The optimized RS device shows good endurance (5000 cycles) and memory retention (5000 s) properties. Moreover, fabricated devices showed double-valued charge-flux characteristics, whereas charge transport was caused by the Ohmic and space charge-limited current mechanisms. Additionally, the optimized device can mimic various synaptic characteristics including potentiation-depression, excitatory post-synaptic current, and paired-pulse facilitation.

Funder

National Research Foundation of Korea

Science and Engineering Research Board

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Reference76 articles.

1. State of the art of metal oxide memristor devices;Mohammad;Nanotechnol. Rev.,2016

2. Role of oxygen vacancies at the TiO2/HfO2 interface in flexible oxide-based resistive switching memory;Zhang;Adv. Electron. Mater.,2019

3. Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics;Abbas;J. Mater. Sci., Mater. Electron.,2020

4. Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices;Abbas;Jpn. J. Appl. Phys.,2018

5. Stopping voltage-dependent PCM and RRAM-based neuromorphic characteristics of germanium telluride;Abbas;Adv. Funct. Mater.,2023

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