Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell-Reference-Cited by-同舟云学术

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Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell

Published:2017-08-29 Issue:38 Volume:28 Page:38LT02
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Simanjuntak Firman Mangasa,Chandrasekaran Sridhar,Pattanayak Bhaskar,Lin Chun-Chieh,Tseng Tseung-Yuen

Funder

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aa80b4/pdf

Reference44 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Nanoionics-based resistive switching memories

3. Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM

4. Temperature induced complementary switching in titanium oxide resistive random access memory

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