Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors-Reference-Cited by-同舟云学术

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Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Published:2018-12-14 Issue:6 Volume:30 Page:064001
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Gluschke J G^ORCID,Seidl J,Burke A M^ORCID,Lyttleton R W,Carrad D J^ORCID,Ullah A R,Fahlvik S,Lehmann S^ORCID,Linke H,Micolich A P^ORCID

Funder

Vetenskapsrådet

Australian Research Council

Energimyndigheten

Knut och Alice Wallenbergs Stiftelse

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aaf1e5/pdf

Reference47 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

2. Multiple-gate SOI MOSFETs: device design guidelines

3. Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length

4. Fin width scaling criteria of body-tied FinFET in sub-50 nm regime

5. Integrated nanoelectronics for the future

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