Metal-to-insulator transition induced by UV illumination in a single SnO2nanobelt-Reference-Cited by-同舟云学术

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Metal-to-insulator transition induced by UV illumination in a single SnO2nanobelt

Published:2017-10-12 Issue:44 Volume:28 Page:445703
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Viana E R,Ribeiro G M,de Oliveira A G,González J C

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aa871a/pdf

Reference34 articles.

1. Markovian and Non-Markovian Light-Emission Channels in Strained Quantum Wires

2. Structural and Optical Characterization of Strained Free-Standing InP Nanowires

3. New insights into the temperature-dependent photoluminescence of Mg-doped GaAs nanowires and epilayers

4. Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

5. Photoluminescence study of GaAs thin films and nanowires grown on Si(111)

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1. Improving Hazardous Gas Detection Behavior with Palladium Decorated SnO2 Nanobelts Networks;Sensors;2023-05-16

2. Enhanced electronic transport properties of Te roll-like nanostructures;Beilstein Journal of Nanotechnology;2022-11-08

3. Deciphering the Role of Defects in the Ambipolar Electrical Transport in Nanocrystalline Sb 2 Se 3 Thin Films;Advanced Electronic Materials;2021-12-22

4. Electrical properties of a single Ni-contact SnO2 nanowire field-effect transistors;Materials Letters;2021-11

5. Sub-diffractional cavity modes of terahertz hyperbolic phonon polaritons in tin oxide;Nature Communications;2021-03-31

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