Scaling of resistive random access memory devices beyond 100 nm2: influence of grain boundaries studied using scanning tunneling microscopy
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/29/i=49/a=495202/pdf
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