Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory-Reference-Cited by-同舟云学术

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Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory

Published:2020-01-28 Issue:16 Volume:31 Page:165201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Rybkina A A^ORCID,Rybkin A G^ORCID,Klimovskikh I I^ORCID,Skirdkov P N,Zvezdin K A,Zvezdin A K,Shikin A M^ORCID

Funder

Russian Science Foundation

Russian Foundation for Basic Research

Saint Petersburg State University, Laboratory "Electronic and spin structure of nanosystems"

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

https://iopscience.iop.org/article/10.1088/1361-6528/ab6470/pdf

Reference45 articles.

1. Memories of tomorrow

2. Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier

3. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

4. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

5. The Promise of Nanomagnetics and Spintronics for Future Logic and Universal Memory

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1. Enhanced Spin–Orbit Torques in Graphene by Pt Adatoms Decoration;Chinese Physics Letters;2024-06-01

2. Спин-поляризованные состояния в электронной структуре Pt(111) и графен/Pt(111);Кристаллография;2024-02-15

3. Spin-Polarized States in the Electronic Structure of Pt(111) and Graphene/Pt(111);Crystallography Reports;2024-02

4. Fabrication of low-dimensional superparamagnetic vanadium diselenide clusters for expanding magnetic storage capacity;Materials Science in Semiconductor Processing;2023-10

5. Ustoychivyy ferrimagnetizm v kvazisvobodnom grafene;Письма в Журнал экспериментальной и теоретической физики;2023-04-15

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