β-Ga2O3 nanotube arrays for high-performance self-powered ultraviolet photoelectrochemical photodetectors
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Published:2024-01-25
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ISSN:0957-4484
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Container-title:Nanotechnology
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language:
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Short-container-title:Nanotechnology
Author:
Ding Shan,
Chen Kai,
Xiu XiangqianORCID,
Shao Pengfei,
Xie Zili,
Tao TaoORCID,
Liu BinORCID,
Chen PengORCID,
Chen DunjunORCID,
Zhang Rong,
Zheng Youdou
Abstract
Abstract
Self-powered ultraviolet (UV) photodetectors (PDs) are critical for future energy-efficient optoelectronic systems due to their low energy consumption and high sensitivity. In this paper, the vertically aligned β-Ga2O3 nanotube arrays (NTs) have been prepared on GaN/sapphire substrate by the thermal oxidation process combined with the dry etching technology, and applied in the UV photoelectrochemical photodetectors (PEC-PDs) for the first time. Based on the large specific surface area of β-Ga2O3 NTs on GaN/sapphire substrates and the solid/liquid heterojunction, the PEC-PDs exhibit excellent self-powered characteristics under 255 nm (UVA) and 365 nm (UVC) light illumination. Under 255 nm (365 nm) light illumination, the maximum responsivity of 49.9 mA/W (32.04 mA/W) and a high detectivity of 1.58×1011 Jones (1.01×1011 Jones) were achieved for the β-Ga2O3 NTs photodetectors at 0 V bias. In addition, the device shows a fast rise/decay time of 8/4 ms (4/2 ms), which is superior to the level of the previously reported self-powered UV PEC-PDs. This high-performance PEC-PD has potential applications in next-generation low-energy UV detection systems.
Funder
Solid State Lighting and Energy-Savings Electronics Collaborative Innovation Center
National Key Research and Development Program of China
Science and Technology Support Program of Jiangsu Province
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering