Surface-gate-defined single-electron transistor in a MoS2 bilayer-Reference-Cited by-同舟云学术

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Surface-gate-defined single-electron transistor in a MoS2 bilayer

Published:2017-02-21 Issue:12 Volume:28 Page:125203
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Javaid M,Drumm Daniel W,Russo Salvy P,Greentree Andrew D

Funder

ARC Discovery

ARC Centre of Excellence for Nanoscale BioPhotonics

ARC Centre of Excellence in Exciton Science

National Computational Infrastructure

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/28/i=12/a=125203/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reactivity of Diazonium Salts on Single- and Multilayer MoS₂ on Au(111);The Journal of Physical Chemistry C;2022-10-19

2. Cu_n Clusters (n = 13, 43, and 55) as Possible Degradant Agents of mSF₆ Molecules (m = 1, 2): A DFT Study;ACS Omega;2022-09-14

3. Nanomaterials‐based gas sensors of SF 6 decomposed species for evaluating the operation status of high‐voltage insulation devices;High Voltage;2019-12

4. Band structure and giant Stark effect in two-dimensional transition-metal dichalcogenides;Electronic Structure;2018-11-20

5. Impurity-assisted electric control of spin-valley qubits in monolayer MoS 2;2D Materials;2018-04-10

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