Abstract
Abstract
The lack of low-cost methods to synthesize large-area graphene-based materials is still an important factor that limits the practical application of graphene devices. Herein, we present a facile method for producing large-area graphene oxide-metal (GO–M) films, which are size controllable and transferable. The sensor constructed using the GO–M film exhibited humidity sensitivity while being unaffected by pressure. The relationship between the sensor’s resistance and relative humidity followed an exponential trend. The GO–Mg sensor was the most sensitive among all the tested sensors. The facile synthesis of GO–M films will accelerate the widespread utilization of graphene-based materials.
Funder
Suzhou Key Core Technology Research Project
Qinglan Project of Jiangsu Province of China
Natural Science Foundation of the Jiangsu Higher Education Institutions of China