Abstract
Abstract
Stochastic resonance (SR) in a single-electron system is expected to allow information to be correctly carried and processed by single electrons in the presence of thermal fluctuations. Here, we comprehensively study thermally driven single-electron SR. The response of the system to a weak voltage signal is formulated by considering the single-electron tunneling rate, instead of the Kramers’ rate generally used in conventional SR models. The model indicates that the response of the system is maximized at finite temperature and that the peak position is determined by the charging energy. This model quantitatively reproduces the results of a single-electron device simulator. Single-electron SR is also demonstrated using a GaAs-based single-electron system that integrates a quantum dot and a high-sensitivity charge detector. The developed model will contribute to our understanding of single-electron SR and will facilitate accurate prediction, design, and control of single-electron systems.
Funder
Japan Society for the Promotion of Science
Precursory Research for Embryonic Science and Technology
Ministry of Education, Culture, Sports, Science and Technology
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献