Influence of water vapor on the electronic property of MoS2 field effect transistors
Author:
Funder
NSF of China
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/28/i=20/a=204003/pdf
Reference40 articles.
1. Single-layer MoS2 transistors
2. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
3. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
4. Advances in MoS2-Based Field Effect Transistors (FETs)
5. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
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