Abstract
Abstract
Low-cost, highly efficient thermoelectric thin-film materials are becoming increasingly popular as miniaturization progresses. Mg3Sb2 has great potential due to its low cost and high performance. However, the fabrication of Mg3Sb2 thin films with high power factors (PFs) poses a certain challenge. In this work, we propose a general approach to prepare Mg3Sb2 thin films with excellent thermoelectric properties. Using a two-step thermal evaporation and rapid annealing process, (001)-oriented Mg3Sb2 thin films are fabricated on c-plane-oriented Al2O3 substrates. The structure of the film orientation is optimized by controlling the film thickness, which modulates the thermoelectric performance. The PF of the Mg3Sb2 at 500 nm (14 μW·m−1·K−2) would increase to 169 μW·m−1·K−2 with Ag doping (Mg3Ag0.02Sb2) at room temperature. This work provides a new strategy for the development of high-performance thermoelectric thin films at room temperature.
Funder
National Natural Science Foundation of China
Basic and Applied Basic Research Foundation of Guangdong Province
Research Foundation of Education Bureau of Hunan Province
Natural Science Foundation of Hunan Province
Guangdong Provincial Key Laboratory Program
Shenzhen Natural Science Funds for Distinguished Young Scholar
Tencent Foundation through the XPLORER PRIZE
Guangdong Provincial Key Laboratory Program of the Department of Science and Technology of Guangdong Province