Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE

Author:

Semlali EliasORCID,Avit Geoffrey,André YaminaORCID,Gil Evelyne,Moskalenko Andriy,Shields Philip,Dubrovskii Vladimir G,Cattoni Andrea,Harmand Jean-ChristopheORCID,Trassoudaine Agnès

Abstract

Abstract Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of GaN on sapphire masked with SiN x . We discuss two occurrences related to axial and radial growth of GaN nanowires. A growth suppression phenomenon was observed under certain conditions, which was circumvented by applying the cyclic growth mode. A theoretical model involving inhibiting species was developed to understand the growth suppression phenomenon on the masked substrates. Various morphologies of GaN nanocrystals were obtained by controlling the competition between the growth and blocking mechanisms as a function of the temperature and vapor phase composition. The optimal growth conditions were revealed for obtaining regular arrays of ∼5 μm long GaN nanowires.

Funder

LabEx GANEX

H2020 European Research Council

St. Petersburg State University

EPSRC

Agence Nationale de la Recherche

European Research Council

Publisher

IOP Publishing

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