Strong valley splitting in d 0 two-dimensional SnO induced by magnetic proximity effect

Abstract

Abstract Strong magnetic interfacial coupling in van der Waals heterostructures is important for designing novel electronic devices. Besides the most studied transition metal dichalcogenides (TMDCs) materials, we demonstrate that the valley splitting can be activated in two-dimensional tetragonal d 0 metal oxide, SnO, via the magnetic proximity effect by EuBrO. In SnO/EuBrO, the valley splitting of SnO can reach ∼46 meV, which is comparable to many TMDCs and equivalent to an external magnetic field of 800 T. In addition, the valley splitting can be further enhanced by adjusting interlayer distance and applying uniaxial strains. A design principle of new spintronic device based on this unique electronic structure of SnO/EuBrO has been proposed. Our findings indicate that SnO is a promising material for future valleytronics applications.