In-situ STS studies and first principles calculations on bare and Sn adsorbed UHV exfoliated WS2 layers

Abstract

Abstract Abstarct. Two dimensional (2D) derivatives of tin (Sn) have obtained special deliberations recently due to practical realization of planar, as well as, buckled hexagonal lattice of Sn called stanene. However, it has been observed that proper choice of substrate is very important for growth of stanene like films owing to large core size of Sn that prefers sp 3 hybridization over sp 2. Transition metal dichalcogenides (TMDs) like MoS2 or WS2 with honey comb lattice structure seem to be promising substrate candidates for 2D growth of Sn. In the present work, we report mechanical exfoliation of few layers of WS2 under ultra-high vacuum (UHV) conditions and investigations of growth and local electronic structure by in-situ scanning tunneling microscopy (STM) and spectroscopy (STS) studies. Flat WS2 surface with honeycomb lattice structure in the atomic scale with a lattice constant of 0.34 nm is evident in the STM investigations, whereas, STS measurements reveal local density of states (LDOS) of WS2 with a bandgap of approximately 1.34 eV. Density functional theory (DFT) calculations performed by considering bulk WS2 reveal conduction and valence band states comprised of S p and W d at both sides of the Fermi energy (EF) and an indirect bandgap of 1.38 eV. Experimental observations upon Sn adsorption, reveal commensurate growth of Sn atoms on the sulfur `S’ sites with a buckling height of 40 ±10 pm. STS measurements exhibit local electronic structure of the Sn adsorbed surface with clear evidence of in-gap states. DFT calculations quantify the experimental results demonstrating `S’ sites as the most stable sites for the atomic adsorption of Sn with a buckling height of around 80 pm and reveal signature of in-gap hybridized states comprised of Sn p and W d orbitals.