Phonon limited mobility in 3D Dirac semimetal Cd3As2

Abstract

Abstract We report the numerical calculations of phonon limited electron mobility, μ in Cd3As2 three dimensional Dirac semimetal using Boltzmann transport theory over a temperature range 20<T<300K. By employing the Ritz iteration technique, we have directly solved the 3D linearized Boltzmann transport equation to obtain the first order perturbation distribution function Φ −1(E k ) as a function of electron energy E k and hence the mobility, μ. we have considered electrons scattering by acoustic phonons via deformation potential scattering and polar optical phonons. The μ due to the latter is dominating the former for T>80K, for electron concentration n e = 1x1018cm−3. Thiscrossover shifts to lower T, with decreasing n e. The calculations are qualitatively agreeing with the experimental results.