Author:
Qiu X Z,Zhang G R,Chen W J,Yu T,Hou X M,Zhang Q Z,Xu G Q
Abstract
Abstract
IGBT is widely used in photovoltaic power generation, aerospace, electric vehicles, ships and other power electronic equipment due to its advantages such as simple driving, high power level, low power consumption, and good thermal stability. As the core component of power electronic equipment, IGBT has always been a major concern for manufacturers and users. Excessive temperature is considered to be the main cause of IGBT failure. In order to meet the needs of high reliability in these applications, it is important to manage and control the temperature of the IGBT. Therefore, how to estimate or measure the junction temperature of IGBT is the focus of research on IGBT reliability. This article introduces several published methods for measuring junction temperature, focuses on the Temperature sensitive electrical parameters (TSEP) method and thermal resistance network method, and conducts experimental verification through the IGBT double-pulse test platform. Trying to provide help for future junction temperature detection work.
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