SnO2 doped In2O3 thin films as reducing gas sensors

Abstract

Summery This research includes description of the x-ray diffraction, morphology and sensing measurements of SnO2 doped In2O3 thin films synthesized by pulsed laser deposition method on glass and silicon wafer substrates. In2O3:SnO2 powders were obtained by mixing In2O3 with SnO2 in the desired ratio, and calcination the at temperature 1273 K for 5 hours. SnO2 doped In2O3 thin films with different ratios (0, 0.01, 0.03, 0.05, 0.07, and 0.09% wt.) were prepared using pulsed laser deposition method. The structural investigation using X-ray diffraction revealed that the main peaks were compatible with the slandered cards of indium oxide and indium tin oxide. Atomic force microscope declared reduction of grain size by increasing of tin oxide ratio. The research imply details of samples preparation, experimental methods and results which are given and explained. In2O3:SnO2/n-Si film NH3 sensors were fabricated. The doping ratio that gave the highest sensitivity for NH3 was 5% wt.SnO2. SnO2 doped In2O3 thin films was found sensitive against NH3 at the working temperature 473K. The results showed that the sensors based on I2O3:SnO2 films revealed very short response time(13.5s) to NH3 at 3% SnO2 ratio at473Kworking temperature.