Author:
Sulaiman Huda Talal,Mohammed Sahar Abdul Aziz,Mohammed Asmaa Hadi
Abstract
Abstract
PbSe semi conductors are considered to be suitable product for its phototransistor implementations for IR emission. The structural characteristics of PbSe nanostructures have been studied. Placing the produced thin films of PbSe on sufficiently washed quartz molecules by thermal evaporation technique. The structural characteristics of the FTIR recording device spectroscopy design Shimadzu have been employed to calculate the transmitted and absorbed wavelengths of PbSe thin layer placed in luminous spectrum (400–4000 nm) on quartz substrates pre and post β-ray radiation.