Author:
Salman Emad A.,Rahim Hasien Ali
Abstract
Abstract
The electrical properties of the Sb films were studied with different annealing temperatures, these films were deposited on glass substrates at room temperature thermal evaporation technique with thickness (0.5 μm), all samples are annealed in a vacuum for one hour. the d.c conductivity for all deposited films decreases from 17.54 × 10−2 to 12.23 × 10−2 (Ω.cm)−1 with increase of annealing temperature form 373K to 473 K. Increasing of annealing temperature from 373K to 473K, caused the electrical activation energies Ea1 and Ea2 to increase from 0.014 to 0.021eV and from 0.026 to 0.033eV respectively. Hall measurements showed that all the films are p-type.