Abstract
Abstract
In the paper, a method of experimental estimation of epitaxial growth rate has been suggested. A corner stone of this method is obtaining image of initial shape of solid state surface by means of atomic force microscopy before the start of the process of epitaxial growth. These experimental data should be completed by measurements of special bistatic cross-section of visible light scattering on the sample surface both before the beginning of technological process and after its end. Mathematical model of epitaxial growth is based on simplification of the Kardar-Parisi-Zhang equation. The method of characteristics has been applied to solve this equation.