Fabrication of electrolyte-gate nanocrystalline diamond- based field effect transistor (NCD-EGFET) for HIV-1 Tat protein detection

Abstract

Abstract In this paper, we reported on the fabrication process of electrolyte-gate field effect transistor using nanocrystalline diamond as a sensing transducer. The fabrication procedure was begin with the growth of nanocrystalline diamond thin film on silicon/silicon dioxide (Si/SiO2) substrate using microwave plasma-enhanced chemical vapour deposition (CVD). Then the photolithography process was performed in order to design and pattern the field effect transistor device with the active gate channel of 60 µm length and 20 µm width. Each device consists of three active gate channel which connecting to three different pairs of source and drain contact. The surface morphology of fabricated NCD-EGFET was characterized using Scanning Electron Microscope to clarify the active gate channel of the device and the grain size of nanocrystaline diamond. The current-voltage (I-V) measurement of the device were carried out to study the electrical behaviour for HIV-1 Tat protein detection via RNA aptamer as sensing probe.