Study of the Proton Irradiation Effects in n-FZ DSSD for the Si Tracker at R3B Experiment

Abstract

Abstract The R3B collaboration aims to assemble an experimental setup with high resolution and efficiency to perform kinematically complete measurements of reactions with high-energy RIBs (radioactive ion beams). In the R3B experimental setup, the silicon tracker is positioned closest to the target region and can provide high-resolution position measurements of light-charged particles like protons. The three layers of the silicon tracker are constructed with a total of 30 Si double-sidedstrip detectors (DSSD). In this paper, as an option of 23 MeV proton irradiated n-type Float-Zone(Fz)Si double-sidedstrip detector (DSSD) havebeen considered, and by taking the two-trapproton irradiation damage model, the bulk damage effect and the macroscopic performance of the Sidouble-sidedstrip detector (DSSD) have been discussed. The detector is irradiated with three values of proton fluences (equivalent to 1Mev neutron fluence): 2×1014,5×1014 and 8×1014 cm-2. By using the Shockley-Read-Hall recombination (SRH) formulation, the full depletion voltage and leakage current have been measured as a function of the irradiation dose, finally the device and process parameters and specifications for the Si double-sidedstrip detector (DSSD) used in the R3B silicon tracker experimenthavebeen proposed.