Impact of Tin concentration in ITO films on Optoelectronic sensor performance

Author:

Ramanathan G,Murali K R

Abstract

Abstract In viewing the opportunity to enhance Photovoltaic application, nine samples having different concentrations (5%, to 70%) were synthesized by sol gel Acrylamide route. XRD study indicates the entire films exhibited single phase with bixbyte structure for all films. EDXA studies confirm the existence SnO2 enclosures in the entire samples. Atomic force micrographs of ITO films conclude that the grain size decreases with increase of tin concentration. Hot probe measurements reinforce the optimum concentration of tin (10%) for its transport properties, their optoelectronic application of DSSC. This paper focuses on the DSSC performance. In this work ITO films and their gas sensing characteristics are studied and their results are reported. ITO based H2S sensor with 70% tin concentration exhibited maximum sensitivity at 100 °C with higher recovery time than the response times. After a long time, ITO films with different concentrations of tin (450 °C) return to the original state.

Publisher

IOP Publishing

Subject

General Medicine

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