Thin Film Transistors p-type Depletion Mode based on Nickel-doped Zinc Oxide

Abstract

Abstract In this work, Nickel-doped Zinc oxide (Ni:ZnO) thin film transistors (TFTs) p-type depletion mode were fabricated with different channel lengths. Channel lengths for TFTs were 50 μm, 70 μm and 100 μm. Ni:ZnO thin films deposited by hydrothermal technique The X-ray Diffraction (XRD) was used to examine the structural analytic of the prepared thin films. The diffraction peaks of prepared Ni:ZnO thin films are fairly matching with the hexagonal wurtzite ZnO structure with the preferred orientation (002) plane. The Scanning Electron Microscopy (SEM) with Atomic Force Microscopy (AFM) were used to characterize the surface morphologies of the fabricated thin films and study them. The SEM images confirm nanorods nanostructures. Hall Effect measurements reveal that the fabricated thin film is p-type. The characterization of Ni:ZnO TFTs p-type depletion mode was investigated by transfer (IDS–VGS) characteristics. The threshold voltage (VTh), subthreshold-swing (S.S), the on-off current ratio (ION/OFF) and the mobility carrier (saturation regime) were calculated. The 50μm Ni:ZnO TFT shows better performance based on device carrier mobility and highest ION/OFF ratio.