The Effect of Photoconductive Semiconductor Materials in Improving the Resolution of Femtosecond Streak Camera

Abstract

Abstract In this study, through the research on the effect of photoconductive semiconductor materials in improving the resolution of femtosecond streak camera, the effective value of applying photoconductive semiconductor materials to femtosecond streak camera is discussed and analyzed, and the effectiveness of photoconductive semiconductor materials in improving the resolution of femtosecond streak camera is verified. Method: In this study, first of all, the generation and recombination of carriers in semiconductors are studied. Solving the continuity equation is applied to further explore the law of the motion of carriers. Later, photoconductive semiconductor materials are used in the preparation of switching devices and scanning circuits. After that, the prepared circuit module is tested by dark current. The main purpose is to realize the resistance of the circuit switch in the intrinsic state and the dark state withstand voltage ability of the circuit switch. Results: It is found that the dark state withstand voltage of each switch can exceed 6000V. In addition, it is found that the current value of the switch under different light is different. When in the natural light, the current value is large. When it is in the state of shading, its current value is relatively small. The efficiency of all three switches is over 50%. The efficiency of nonlinear model is obviously higher than that of linear model, which can be more than 90%. By applying the semiconductor material to the femtosecond streak camera, the scanning circuit can be optimized effectively to meet the high standard requirements of the femtosecond streak camera for the scanning circuit, which has certain advantages, and has certain value and significance for improving the resolution of the second streak camera.