A New High-speed Drive Topology of Wide-bandgap Power MOSFET Based on Dynamic Procedure Model-Reference-Cited by-同舟云学术

A New High-speed Drive Topology of Wide-bandgap Power MOSFET Based on Dynamic Procedure Model

Published:2019-12-01 Issue:5 Volume:677 Page:052065
ISSN:1757-8981
Container-title:IOP Conference Series: Materials Science and Engineering
language:
Short-container-title:IOP Conf. Ser.: Mater. Sci. Eng.

Author:

Zhao Chuang,Guo Wenyong,Zha Wenhan,Cao Shaoqun,Yang Benkang,Gao Huijuan,Cai Yang,Tian Chenyu

Abstract

Abstract More and more attention is being drawn on the wide-bandgap power MOSFET, for its performance is far superior to the traditional silicon MOSFET. Driving technology is one of the key factors that influence the performance of device. In this paper, a high-speed drive circuit topology is proposed. The principle of the improved drive circuit is simple and easy to be implemented. Compared with the traditional design, it can reduce the switching time while maintaining the original driving performance.

Publisher

IOP Publishing

Subject

General Medicine

Link

https://iopscience.iop.org/article/10.1088/1757-899X/677/5/052065/pdf

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