Abstract
Abstract
A novel resistance model of silicon carbide (SiC) merged PiN Schottky diodes (MPS) is presented in this study. With this model, the device characteristics and power dissipation can be predicted. The on-resistance in the three operating modes, namely, unipolar, low-injection and high-injection modes, is calculated. In the unipolar and low-injection modes, the effect of temperature on carrier mobility and conduction angle are added to the factors that need to be considered, whereas the influence of current density is considered in the high injection mode. The carrier distribution in the high injection mode is analyzed and applied to determine the resistance. The model is verified experimentally via comparison of the calculated and measured characteristics.
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